Part Number | Description | Manufacture |
---|---|---|
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IGBT High Speed Switching & Low Power Loss VCE(sat) = 1.85V @ IC = 50A Eoff = 0.55mJ @ TC = 25°C High Input Impedance trr = 80ns (typ.) @diF/dt = 1000A/ μs Maximum junction temperature 175°C Applications PFC UPS PV Inverter Welder |
MagnaChip |
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IGBT • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A • 100% of the Parts tested for ILM(1) • High Input Im |
ON Semiconductor |
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IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperature Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impeda |
Fairchild Semiconductor |
|
IGBT |
ON Semiconductor |
|
IGBT |
ON Semiconductor |
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IGBT • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A • 100% of the Parts are Tested for |
ON Semiconductor |
|
IGBT • AEC−Q101 Qualified • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A • 100% of the Parts are Tested for |
ON Semiconductor |
|
Hybrid IGBT • AEC−Q101 Qualified • Maximum Junction Temperature : TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A • Fast Switching • Tighten Paramet |
ON Semiconductor |
|
IGBT • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 50 A • 100% of the Parts are Tested for ILM (Note 2) • Smoo |
ON Semiconductor |
|
Field Stop Trench IGBT • Maximum Junction Temperature : TJ =175oC • Positive Temperaure Co-efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM(1) • High Input Impedan |
Fairchild Semiconductor |
Total 19 results |