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50t65fd Matched Datasheet



Part Number Description Manufacture
MBQ50T65FESC
IGBT

 High Speed Switching & Low Power Loss
 VCE(sat) = 1.85V @ IC = 50A
 Eoff = 0.55mJ @ TC = 25°C
 High Input Impedance
 trr = 80ns (typ.) @diF/dt = 1000A/ μs
 Maximum junction temperature 175°C Applications
 PFC
 UPS
 PV Inverter
 Welder
Manufacture
MagnaChip
FGHL50T65SQDT
IGBT

• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.47 V (Typ.) @ IC = 50 A
• 100% of the Parts tested for ILM(1)
• High Input Im
Manufacture
ON Semiconductor
FGA50T65SHD
IGBT

• Maximum Junction Temperature : TJ =175oC
• Positive Temperature Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impeda
Manufacture
Fairchild Semiconductor
FGHL50T65MQDT
IGBT
Manufacture
ON Semiconductor
FGH50T65UPD
IGBT
Manufacture
ON Semiconductor
AFGHL50T65SQD
IGBT

• AEC−Q101 Qualified
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
• 100% of the Parts are Tested for
Manufacture
ON Semiconductor
AFGHL50T65SQ
IGBT

• AEC−Q101 Qualified
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A
• 100% of the Parts are Tested for
Manufacture
ON Semiconductor
AFGHL50T65SQDC
Hybrid IGBT

• AEC−Q101 Qualified
• Maximum Junction Temperature : TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A
• Fast Switching
• Tighten Paramet
Manufacture
ON Semiconductor
FGHL50T65MQD
IGBT

• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.45 V (Typ.) @ IC = 50 A
• 100% of the Parts are Tested for ILM (Note 2)
• Smoo
Manufacture
ON Semiconductor
FGH50T65SQD
Field Stop Trench IGBT

• Maximum Junction Temperature : TJ =175oC
• Positive Temperaure Co-efficient for Easy Parallel Operating
• High Current Capability
• Low Saturation Voltage: VCE(sat) =1.6 V(Typ.) @ IC = 50 A
• 100% of the Parts Tested for ILM(1)
• High Input Impedan
Manufacture
Fairchild Semiconductor

Total 19 results






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