512-Kb Datasheet | Specifications & PDF Download

512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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M27W400 4 Mbit (512Kb x8 or 256Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7 to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 80ns at VCC

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M95256 M95128 256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock PRELIMINARY DATA s s s s SPI Bus Compatible Serial Interface Supports Positive

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active

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SPC500A1 512KB SOUND CONTROLLER GENERAL DESCRIPTION www.datasheet4u.com The SPC500A1 is a CPU based two-channel speech/melody synthesizer including C

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INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina

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512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 /

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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M27W401 4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V

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M29F512B 512 Kbit (64Kb x8, Bulk) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS A

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M48T512Y M48T512V 5.0 or 3.3 V, 4 Mbit (512 Kbit x 8) TIMEKEEPER® SRAM Not recommended for new design Features ■ Integrated ultra low power SRAM, r

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INTEGRATED CIRCUITS XA-G3 XA 16-bit microcontroller family 32K/512 OTP/ROM/ROMless, watchdog, 2 UARTs Product specification Supersedes data of 1998 A

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2104/D Advance Information 256KB and 512KB BurstRAM™ Secondary Cache Modules for P

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W989D6KB / W989D2KB 1. GENERAL DESCRIPTION 512Mb Mobile LPSDR The Winbond 512Mb Low Power SDRAM is a low power synchronous memory containing 536,8

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25AA02E48/25AA02E64 2K SPI Bus Serial EEPROMs with EUI-48™ or EUI-64™ Node Identity Device Selection Table Part Number 25AA02E48 25AA02E64 VCC Ran

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ESMT Flash „ FEATURES y Single supply voltage 2.3~3.6V y Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MH

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CY7C1020CV26 512-Kbit (32 K × 16) Static RAM 512-Kbit (32 K × 16) Static RAM Features ■ Temperature range ❐ Automotive: –40 °C to 125 °C ■ High speed

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