MX29F040 (Macronix International)
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
MX29F040
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8 only • Single power supply operation - 5.0V only operation for read, er
(31 views)
MX26LV400 (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
MX26LV400
Macronix NBit TM Memory Family 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
FEATURES
• Ext
(31 views)
K5A3340YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(28 views)
MX29F400CT (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(25 views)
K5A3240YT (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
(24 views)
MX29F400CB (Macronix International)
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
www.DataSheet4U.com
MX29F400C T/B
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
FEATURES
• 524,288 x 8/262,144 x 16 sw
(24 views)
HY29F400TT90 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(21 views)
HY29F400BT45 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(18 views)
KM23C4100DET (Samsung semiconductor)
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(17 views)
KM684000C (Samsung)
512Kx8 bit Low Power CMOS Static RAM
KM684000C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
CMOS SRAM
Revision History
Revision No.
0.0 1.0
History
Initial draft Finalize
(17 views)
K6R4008V1C (Samsung semiconductor)
512Kx8 Bit High Speed Static
www.DataSheet4U.com
PRELIMINARY CMOS SRAM
K6R4008V1C-C/C-L, K6R4008V1C-I/C-P
3Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Opera
(17 views)
KM23C4000DG (Samsung semiconductor)
4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(G)
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current c
(17 views)
KM23C4100DT (Samsung semiconductor)
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
KM23C4100D(E)T
4M-Bit (512Kx8 /256Kx16) CMOS MASK ROM
FEATURES
• Switchable organization 524,288 x 8(byte mode) 262,144 x 16(word mode) • Fast access
(16 views)
K5A3340YBC-T855 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(16 views)
KM23C4000DTY (Samsung semiconductor)
4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(16 views)
HY29F400TG45 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(15 views)
HY29F400TG55 (Hynix Semiconductor)
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
HY29F400
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement
(15 views)
K5A3340YBC-T755 (Samsung semiconductor)
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
K5A3x40YT(B)C
Document Title
Multi-Chip Package MEMORY
Preliminary MCP MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) F
(15 views)
IC62LV5128L (ICSI)
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
www.DataSheet4U.com
IC62LV5128L IC62LV5128LL
Document Title
512Kx8 bit Low Voltage and Ultra Low Power CMOS Static RAM
Revision History
Revision No
(15 views)
KM23C4000DETY (Samsung semiconductor)
4M-Bit (512Kx8) CMOS MASK ROM
KM23C4000D(E)TY
4M-Bit (512Kx8) CMOS MASK ROM
FEATURES
• 524,288 x 8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Curre
(15 views)