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A3R12E40CBF - 512Mb DDRII Synchronous DRAM
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512Mbit (64Mx8Bit)NAND FLASH 512Mb NAND FLASH AFND1208U1 Preliminary Confidential 1 512Mbit (64Mx8Bit)NAND FLASH Revision No. History Rev.00 Re.MT18HTF6472 - 512MB DDR2 SDRAM Registered DIMM
512MB, 1GB, 2GB (x72, ECC, SR) 240-Pin DDR2 SDRAM RDIMM Features DDR2 SDRAM Registered DIMM (RDIMM) MT18HTF6472 – 512MB MT18HTF12872(P) – 1GB MT18HTF.NT5DS128M4CG - 512Mb DDR SDRAM
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru.NT5DS64M8CS - 512Mb DDR SDRAM
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru.K4H511638J - 512Mb J-die DDR SDRAM
Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP-(II) with Lead-Free & Halogen-Free (RoHS compliant) dat.H5PS5162GFR - 512Mb DDR2 SDRAM
H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H.NT5DS128M4CS - 512Mb DDR SDRAM
NT5DS32M16CG NT5DS64M8CG NT5DS128M4CG NT5DS32M16CS NT5DS64M8CS NT5DS128M4CS 512Mb DDR SDRAM Features • DDR 512M bit, Die C, based on 90nm design ru.K4H510838J - 512Mb J-die DDR SDRAM
Rev. 1.11, Aug. 2011 K4H510438J K4H510838J K4H511638J 512Mb J-die DDR SDRAM 60FBGA & 66TSOP-(II) with Lead-Free & Halogen-Free (RoHS compliant) dat.IS45S32160D - 512Mb SDRAM
IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device OVERVIEW FEATURES • Clock frequency: 2.A4S12D40FTP - 512Mb DDR SDRAM
A4S12D30FTP A4S12D40FTP 512M Double Data Rate Synchronous DRAM 512Mb DDR SDRAM Specification A4S12D30FTP A4S12D40FTP Zentel Electronics Corp. Revisi.HY27US08121M - (HY27xSxx121M) 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.K4J52324QE - 512Mbit GDDR3 SDRAM
K4J52324QE 512M GDDR3 SDRAM 512Mbit GDDR3 SDRAM Revision 1.3 Feb 2008 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND.HY27US16121B - 512Mb NAND FLASH
HY27US(08/16)12(1/2)B Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash 512Mb NAND FLASH HY27US(08/16)12(1/2)B HY27US0812(1/2)B HY27US1612(1/2)B This .W949D6KB - 512Mb Mobile LPDDR
W949D6KB / W949D2KB 512Mb Mobile LPDDR Table of Contents- 1. GENERAL DESCRIPTION ..........HY27US16121A - 512Mbit (64M x 8bit / 32M x 16bit) NAND Flash Memory
HY27US(08/16)121A Series HY27SS(08/16)121A Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M.H5RS5223CFR - 512Mbit (16M x 32) GDDR3 SDRAM
H5RS5223CFR 512Mbit (16Mx32) GDDR3 SDRAM H5RS5223CFR This document is a general product description and is subject to change without notice. Hynix Se.AS4C32M16SB-7TCN - CMOS synchronous 512Mb SDRAM
AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revisio.AS4C32M16SB-7TIN - CMOS synchronous 512Mb SDRAM
AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revisio.AS4C32M16SB-6TIN - CMOS synchronous 512Mb SDRAM
AS4C32M16SB-6TIN AS4C32M16SB-7TIN AS4C32M16SB-7TCN Revision History AS4C32M16SB-7TCN/AS4C32M16SB-7TIN/AS4C32M16SB-6TIN- 54pin TSOPII PACKAGE Revisio.