512MB- Datasheet | Specifications & PDF Download

H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H

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PRELIMINARY DATA SHEET 512MB Unbuffered DDR SDRAM DIMM EBD52UC8AKFA-5-E (64M words × 64 bits, 2 Ranks) Description The EBD52UC8AKFA is 64M words × 64

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Registered DDR2 SDRAM DIMM EBE51AD8AGFA (64M words × 72 bits, 1 Rank) Specifications • Density: 512

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DATA SHEET www.DataSheet4U.com 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8AJWA (64M words × 64 bits, 1 Rank) Specifications • Density: 512MB • Organiz

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Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RE

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512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M (16Mx32bit) Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,19

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H5TQ(S)5163MFR 512Mb DDR3 SDRAM H5TQ(S)5163MFR ** Since DDR3 Specification has not been defined completely yet in JEDEC, this document may contain ite

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SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 * Samsung Electronics reserves the right to

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

Rating: 1 ★ (5 votes)

ELECTRONICS March. 2003 San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 512Mb/256Mb

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DATA SHEET 512MB Registered DDR SDRAM DIMM EBD51RC4AKFA-E (64M words × 72 bits, 1 Rank) Description The EBD51RC4AKFA is a 64M words × 72 bits, 1 rank

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HY27SS(08/16)121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash M

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DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM www.DataSheet4U.com 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS complia

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DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM www.DataSheet4U.com 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS complia

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DDR SDRAM 512Mb D-die (x8, x16) Preliminary DDR SDRAM www.DataSheet4U.com 512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free (RoHS complia

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Rev. 1.0, Jun. 2016 K4T51083QN K4T51163QN 512Mb N-die DDR2 SDRAM 60 & 84FBGA with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRON

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PRELIMINARY DATA SHEET www.DataSheet4U.com 512MB Fully Buffered DIMM EBE51FD8AGFD EBE51FD8AGFN Specifications • Density: 512MB • Organization  64M

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Rev. 1.1, Sep. 2010 K8A12(13)15ET(B/Z)C 512Mb C-die NOR FLASH (32Mb x16) Synch Burst, Multi Bank SLC (1.7V ~ 1.95V) datasheet SAMSUNG ELECTRONICS RE

Rating: 1 ★ (5 votes)