INCHANGE Semiconductor isc N-Channel MOSFET Transi.
53N06 - N-Channel MOSFET Transistor
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Vol.IPD053N06N - N-Channel MOSFET
isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanch.HRLF53N06H - N-Channel Trench MOSFET
HRLF53N06H Dec 2016 HRLF53N06H 60V N-Channel Trench MOSFET Features Optimized for High Speed Switching, Logic Level Enhanced Body diode dv/dt ca.IPD053N06N - Power-Transistor
Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .STP53N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
.IPD053N06N3G - OptiMOS Power-Transistor
www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn.