53N06 Datasheet | Specifications & PDF Download

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53N06 N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transi.

Inchange Semiconductor

53N06 - N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Vol.
Rating: 1 (3 votes)
INCHANGE

IPD053N06N - N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanch.
Rating: 1 (3 votes)
SemiHow

HRLF53N06H - N-Channel Trench MOSFET

HRLF53N06H Dec 2016 HRLF53N06H 60V N-Channel Trench MOSFET Features  Optimized for High Speed Switching, Logic Level  Enhanced Body diode dv/dt ca.
Rating: 1 (2 votes)
Infineon

IPD053N06N - Power-Transistor

Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
Rating: 1 (1 votes)
ST Microelectronics

STP53N06 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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Rating: 1 (1 votes)
Infineon Technologies

IPD053N06N3G - OptiMOS Power-Transistor

www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn.
Rating: 1 (1 votes)
ST Microelectronics

P53N06 - STP53N06

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Rating: 1 (1 votes)
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