53N06 Datasheet | Specifications & PDF Download

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isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanch

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HRLF53N06H Dec 2016 HRLF53N06H 60V N-Channel Trench MOSFET Features  Optimized for High Speed Switching, Logic Level  Enhanced Body diode dv/dt ca

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www.DataSheet4U.net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn

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Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 53N06 ·DESCRIPTION ·Drain Current ID= 53A@ TC=25℃ ·Drain Source Vol

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