IPD053N06N Datasheet - INCHANGE

IPD053N06N, N-Channel MOSFET

isc N-Channel MOSFET Transistor IPD053N06N, IIPD053N06N *.

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IPD053N06N-INCHANGE.pdf

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Datasheet Details

Part number:

IPD053N06N

Manufacturer:

INCHANGE

File Size:

238.50 KB

Description:

N-Channel MOSFET

Features

* Static drain-source on-resistance: RDS(on)≤5.3mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Optimized for synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL

Applications

* of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field

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IPD053N06N N-Channel MOSFET INCHANGE

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