Part number:
IPD053N06N
Manufacturer:
INCHANGE
File Size:
238.50 KB
Description:
N-channel mosfet.
* Static drain-source on-resistance: RDS(on)≤5.3mΩ
* Enhancement mode:
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION
* Optimized for synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL
IPD053N06N Datasheet (238.50 KB)
IPD053N06N
INCHANGE
238.50 KB
N-channel mosfet.
📁 Related Datasheet
IPD053N06N Power-Transistor (Infineon)
IPD053N06N3G OptiMOS Power-Transistor (Infineon Technologies)
IPD053N08N3 N-Channel MOSFET (INCHANGE)
IPD053N08N3 Power-Transistor (Infineon)
IPD053N08N3G Power-Transistor (Infineon Technologies)
IPD050N03L MOSFET (Infineon Technologies)
IPD050N03L N-Channel MOSFET (INCHANGE)
IPD050N03LG MOSFET (Infineon Technologies)
IPD050N10N5 N-Channel MOSFET (INCHANGE)
IPD050N10N5 MOSFET (Infineon)