INCHANGE manufacturer logo and representative part image Part number: IPD053N06N Manufacturer: INCHANGE File Size: 238.50kb Download: 📄 Datasheet Description: N-channel mosfet.
IPD053N06N - Power-Transistor (Infineon) Type OptiMOSTM Power-Transistor Features • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance .
IPD053N06N3G - OptiMOS Power-Transistor (Infineon Technologies) ..net Type IPD053N06N3 G OptiMOS(TM)3 Power-Transistor Features • Ideal for high frequency switching and sync. rec. • Optimized techn.
IPD053N08N3 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IPD053N08N3,IIPD053N08N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.3mΩ ·Enhancement mode: ·100% avalanc.
IPD053N08N3 - Power-Transistor (Infineon) IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD053N08N3G - Power-Transistor (Infineon Technologies) IPD053N08N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance.
IPD050N03L - MOSFET (Infineon Technologies) IPD050N03L G MOSFET OptiMOSTM 3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N03L - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IPD050N03L, IIPD050N03L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche .
IPD050N03LG - MOSFET (Infineon Technologies) IPD050N03L G MOSFET OptiMOSTM 3 Power-Transistor, 30 V Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualif.
IPD050N10N5 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor IPD050N10N5,IIPD050N10N5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5mΩ ·Enhancement mode: ·100% avalanche.
IPD050N10N5 - MOSFET (Infineon) IPD050N10N5 MOSFET OptiMOSTM5 Power-Transistor, 100 V Features • N-channel, normal level • Excellent gate charge x RDS(on) product (FOM) • Very low o.