55N03L Datasheet | Specifications & PDF Download

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resi

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resi

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PHP55N03LTA;PHB55N03LTA; PHD55N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 2 August 2001 Product data 1. Description N-channel

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PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transis

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PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transis

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() CRTD055N03L Trench N-MOSFET 30V, 4.3mΩ, 58A Features • Uses CRM(CQ) advanced Trench MOS technology • Extremely low on-resistance RDS(on) • Excell

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PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transis

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PHP55N03LTA;PHB55N03LTA; PHD55N03LTA N-channel enhancement mode field-effect transistor Rev. 02 — 2 August 2001 Product data 1. Description N-channel

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Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resi

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JE

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55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y F E AT UR E S VDS S 30V ID R DS (

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transis

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MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC055N03L3 Data Sheet Rev. 2.5 Final Industrial

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www.DataSheet4U.com Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • V

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www.DataSheet4U.com S DP /B 55N03L S amHop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transisto

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPP055N03L，IIPP055N03L ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤5.5mΩ ·Enhancem

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www.DataSheet4U.com S DP /B 55N03L S amHop Microelectronics C orp. S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transisto

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current :ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum L

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