.
Winbond
25Q256JWEQ - 1.8V 256M-BIT SERIAL FLASH MEMORY
W25Q256JW 1.8V 256M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI Publication Release Date: December 08. 2017 - Revision B W25Q256JW Table of Contents 1.
NXP
P87C31X2 - 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM low voltage 2.7 to 5.5 V/ low power/ high speed 30/33 MHz
INTEGRATED CIRCUITS 80C31X2/32X2 80C51X2/52X2/54X2/58X2 87C51X2/52X2/54X2/58X2 80C51 8-bit microcontroller family 4K/8K/16K/32K ROM/OTP 128B/256B RAM.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
Mitsubishi
M5M5256DP-70LL-I - 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM
'97.4.7 MITSUBISHI LSIs M5M5256DP,KP,FP,VP,RV -45LL-I,-55LL-I,-70LL-I, -45XL-I,-55XL-I,-70XL-I 262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM DES.
Advanced Micro Devices
28F256 - 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt / Bulk Erase Flash Memory
FINAL Am28F256 256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS s High performance — 70 ns maximum acce.
Renesas
R5F5631DDDLJ - 100-MHz 32-bit RX MCU
Features RX63N Group, RX631 Group Renesas MCUs R01DS0098EJ0180 100-MHz 32-bit RX MCU, on-chip FPU, 165 DMIPS, up to 2-MB flash memory, various com.
MACRONIX
MX25L25645G - 256M-BIT CMOS MXSMIO FLASH MEMORY
MX25L25645G MX25L25645G 3V, 256M-BIT [x 1/x 2/x 4] CMOS MXSMIO® (SERIAL MULTI I/O) FLASH MEMORY Key Features • Protocol Support - Single I/O, Dual I.
Microchip Technology
93C56A - 2-Kbit Microwire Compatible Serial EEPROM
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C 2-Kbit Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range 93AA56A 93AA56B 93LC56A.
AMIC Technology
A290021 - 256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - .
Siemens Semiconductor Group
HYB314265BJ-50 - 256K x 16-Bit EDO-Dynamic RAM
256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organizati.
Cypress Semiconductor
FM18W08 - 256-Kbit (32 K x 8) Wide Voltage Bytewide F-RAM Memory
FM18W08 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory 256-Kbit (32 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 256-Kbit ferroelectr.
Sony
CXA1056P - 8-Bit 30/50 MSPS Flash A/D Converter
.comwww.DataSheet4U.com www.DataSheet4Uwww.DataSheet4U.com .
STMicroelectronics
M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:.
STMicroelectronics
M27V256 - 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V256 256 Kbit (32Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION:.
STMicroelectronics
M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .
STMicroelectronics
M27C256B - 256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
M27C256B 256 Kbit (32Kb × 8) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 45ns ■ Low power consu.
Macronix International
IMX29F002 - 2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum.
Samsung semiconductor
K4R571669D - 256/288Mbit RDRAM(D-die)
K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
Samsung semiconductor
K7B803625B - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0.
Samsung semiconductor
K9F5608U0B-PIB0 - 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
K9F5608U0B-VCB0,VIB0,FCB0,FIB0 K9F5608Q0B-DCB0,DIB0,HCB0,HIB0 K9F5608U0B-YCB0,YIB0,PCB0,PIB0 K9F5608U0B-DCB0,DIB0,HCB0,HIB0 K9F5616Q0B-DCB0,DIB0,HCB0.