60R160 Datasheet | Specifications & PDF Download

IPL60R160CFD7 MOSFET 600V CoolMOSª CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to

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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction P

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Next Previous Resettable PTCs Radial Leaded PTC 60R Series ® ® • The 60R Series Resettable devices utilize a unique polymer-based, Positive Temp

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Next Previous Resettable PTCs Radial Leaded PTC 60R Series ® ® • The 60R Series Resettable devices utilize a unique polymer-based, Positive Temp

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R160P6 IIPW60R160P6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤160mΩ ·Enhance

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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction P

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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Isc N-Channel MOSFET Transistor IPB60R160C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction P

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Man

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TPA60R160M,TPP60R160M,TPV60R160M,TPW60R160M Wuxi Unigroup Microelectronics Co.,Ltd 600V Super-junction Power MOSFET Description 600V Super-junction P

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Isc N-Channel MOSFET Transistor IPB60R160P6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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isc N-Channel MOSFET Transistor IPP60R160P6，IIPP60R160P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switch

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isc N-Channel MOSFET Transistor IPP60R160C6，IIPP60R160C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.16Ω ·Enhancement mode ·Fast Switch

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60R Series POLY-FUSE® Resettable PTCs Radial Leaded > 60R Series RoHS * Description The 60R Series radial leaded device is designed to provide ov

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPA60R160P6 ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C6 600V 600V CoolMOS™ C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.2 Final Powe

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche

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MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Man

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