60n100 Datasheet | Specifications & PDF Download

FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE

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FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in con

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N-Channel Trench Power MOSFET CSD60N100 General Description The CSD60N100 combines advanced trench MOSFET technology with a low resistance package t

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FGL60N100D IGBT FGL60N100D General Description Insulated Gate Bipolar Transistors (IGBTs) with trench gate structure have superior performance in con

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1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order

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Features: • 1000V NPT Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operation • Ro

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1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order

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FDBL0260N100 N-Channel PowerTrench® MOSFET www.onsemi.com FDBL0260N100 N-Channel PowerTrench® MOSFET 100 V, 200 A, 2.6 mΩ „ Max RDS(on) = 2.6 mΩ

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