G60N100BNTD Datasheet, Igbt, Fairchild Semiconductor

G60N100BNTD Features

• Igbt
• High Speed Switching
• Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A
• High Input Impedance
• Built-in Fast Recovery Diode Applications

PDF File Details

Part number:

G60N100BNTD

Manufacturer:

Fairchild Semiconductor

File Size:

417.80kb

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📄 Datasheet

Description:

Npt igbt. Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching

G60N100BNTD Application

• Applications
• UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1000

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G60N100BNTD

Fairchild Semiconductor

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