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G60N100BNTD

NPT IGBT

G60N100BNTD Features

* High Speed Switching

* Low Saturation Voltage: VCE(sat) = 2.5 V @ IC = 60 A

* High Input Impedance

* Built-in Fast Recovery Diode Applications

* UPS, Welder March 2014 General Description Using Fairchild's proprietary trench design and advanced NPT technolo

G60N100BNTD General Description

Using Fairchild's proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device offers the optimum performance for hard switching application such as UPS, welder appl.

G60N100BNTD Datasheet (417.80 KB)

Preview of G60N100BNTD PDF

Datasheet Details

Part number:

G60N100BNTD

Manufacturer:

Fairchild Semiconductor

File Size:

417.80 KB

Description:

Npt igbt.

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G60N100BNTD NPT IGBT Fairchild Semiconductor

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