Part number:
G60N04
Manufacturer:
GOFORD
File Size:
1.29 MB
Description:
Mosfet.
* VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special p
G60N04
GOFORD
1.29 MB
Mosfet.
📁 Related Datasheet
G60N04 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N100 NPT IGBT (Fairchild Semiconductor)
G60N100BNTD NPT IGBT (Fairchild Semiconductor)
1SMA120Z TSG60N100CE (Taiwan Semiconductor)
G60N10T N-Channel Enhancement Mode Power MOSFET (GOFORD)
