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G60N04 - MOSFET

G60N04 Description

GOFORD .
The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G60N04 Features

* VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ) 45V 11 mΩ 9.7 mΩ 60A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special p

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Datasheet Details

Part number
G60N04
Manufacturer
GOFORD
File Size
1.29 MB
Datasheet
G60N04-GOFORD.pdf
Description
MOSFET

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GOFORD G60N04-like datasheet