Datasheet4U Logo Datasheet4U.com

G60N06T - N-Channel Enhancement Mode Power MOSFET

G60N06T Description

G60N06T N-Channel Enhancement Mode Power MOSFET .
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G60N06T Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

📥 Download Datasheet

Preview of G60N06T PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
G60N06T
Manufacturer
GOFORD
File Size
773.76 KB
Datasheet
G60N06T-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • G60N100 - NPT IGBT (Fairchild Semiconductor)
  • G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
  • G60N100CE - TSG60N100CE (Taiwan Semiconductor)
  • G601 - Manual Reset IC (Global Mixed-mode Technology)
  • G60T120 - IGBT (Infineon)
  • G60V60DF - Trench gate field-stop IGBT (STMicroelectronics)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G60N06T-like datasheet