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G60N06T - N-Channel Enhancement Mode Power MOSFET

G60N06T Description

G60N06T N-Channel Enhancement Mode Power MOSFET .
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G60N06T Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

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Datasheet Details

Part number
G60N06T
Manufacturer
GOFORD
File Size
773.76 KB
Datasheet
G60N06T-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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GOFORD G60N06T-like datasheet