Datasheet4U Logo Datasheet4U.com

G60N06T

N-Channel Enhancement Mode Power MOSFET

G60N06T Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested

* RoHS Compliant 60V 50A < 17mΩ < 21mΩ Application

* Power switch

* DC/DC converters Schematic diagram Marking and pin assignment Device G60N06T Package TO-220

G60N06T Datasheet (773.76 KB)

Preview of G60N06T PDF

Datasheet Details

Part number:

G60N06T

Manufacturer:

GOFORD

File Size:

773.76 KB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

G60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G60N04 - MOSFET (GOFORD)
GOFORD Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G60N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low.

G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N100 - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

TAGS

G60N06T N-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

G60N06T Datasheet Preview Page 2 G60N06T Datasheet Preview Page 3

G60N06T Distributor