Part number:
G60N06T
Manufacturer:
GOFORD
File Size:
773.76 KB
Description:
N-channel enhancement mode power mosfet.
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested
* RoHS Compliant 60V 50A < 17mΩ < 21mΩ Application
* Power switch
* DC/DC converters Schematic diagram Marking and pin assignment Device G60N06T Package TO-220
G60N06T
GOFORD
773.76 KB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
G60N06 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04 MOSFET (GOFORD)
G60N04 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N100 NPT IGBT (Fairchild Semiconductor)
G60N100BNTD NPT IGBT (Fairchild Semiconductor)
1SMA120Z TSG60N100CE (Taiwan Semiconductor)
G60N10T N-Channel Enhancement Mode Power MOSFET (GOFORD)
