G60N06T
GOFORD
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N-channel enhancement mode power mosfet. The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of appl
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G60N06 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N06T
N-Channel Enhancement Mode Power MOSFET
Description
The G60N06T uses advanced trench technology to provide
excellent RDS(ON) , low gate cha.
G60N04 - MOSFET
(GOFORD)
GOFORD
Description
The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .
G60N04 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N04K
N-Channel Enhancement Mode Power MOSFET
Description
The G60N04K uses advanced trench technology to provide
excellent RDS(ON) , low gate char.
G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N04D52
Dual N-Channel Enhancement Mode Power MOSFET
Description
The G60N04D52 uses advanced trench technology to
provide excellent RDS(ON) , low.
G60N04K - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N04K
N-Channel Enhancement Mode Power MOSFET
Description
The G60N04K uses advanced trench technology to provide
excellent RDS(ON) , low gate char.
G60N10 - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N10T
N-Channel Enhancement Mode Power MOSFET
Description
The G60N10T uses advanced trench technology to provide
excellent RDS(ON) , low gate char.
G60N100 - NPT IGBT
(Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE.
G60N100BNTD - NPT IGBT
(Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT
FGL60N100BNTD
1000 V, 60 A NPT Trench IGBT
Features
• High Speed Switching • Low Saturation Voltage: VCE.
1SMA120Z - TSG60N100CE
(Taiwan Semiconductor)
1SMA4741 thru 1SMA200Z
SURFACE MOUNT SILICON ZENDER DIODE
PRODUCT SUMMARY
1.0 Watts Surface Mount
FEATURES
For surface mounted applications in order.
G60N10T - N-Channel Enhancement Mode Power MOSFET
(GOFORD)
G60N10T
N-Channel Enhancement Mode Power MOSFET
Description
The G60N10T uses advanced trench technology to provide
excellent RDS(ON) , low gate char.