G60V60DF Trench gate field-stop IGBT

STMicroelectronics

Description

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: G60V60DF
Manufacturer: STMicroelectronics ↗
File Size: 1.54 MB
Datasheet: G60V60DF-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

G60V60DF Distributors

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G60V60DF Trench gate field-stop IGBT STMicroelectronics

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