Datasheet4U Logo Datasheet4U.com

G60V60DF - Trench gate field-stop IGBT

G60V60DF Description

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

G60V60DF Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

G60V60DF Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

📥 Download Datasheet

Preview of G60V60DF PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • G601 - Manual Reset IC (Global Mixed-mode Technology)
  • G60N04 - MOSFET (GOFORD)
  • G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N06T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
  • G60N100 - NPT IGBT (Fairchild Semiconductor)

📌 All Tags

STMicroelectronics G60V60DF-like datasheet