Datasheet4U Logo Datasheet4U.com

G60N10, G60N10T - N-Channel Enhancement Mode Power MOSFET

G60N10 Description

G60N10T N-Channel Enhancement Mode Power MOSFET .
The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: G60N10, G60N10T. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
G60N10, G60N10T
Manufacturer
GOFORD
File Size
1.02 MB
Datasheet
G60N10T-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: G60N10, G60N10T.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • G60N100 - NPT IGBT (Fairchild Semiconductor)
  • G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
  • G60N100CE - TSG60N100CE (Taiwan Semiconductor)
  • G601 - Manual Reset IC (Global Mixed-mode Technology)
  • G60T120 - IGBT (Infineon)
  • G60V60DF - Trench gate field-stop IGBT (STMicroelectronics)

📌 All Tags

N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G60N10-like datasheet