Datasheet4U Logo Datasheet4U.com

G60N10

N-Channel Enhancement Mode Power MOSFET

G60N10 Features

* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 60A < 17mΩ < 19mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-220 Ordering Information Device G60N10T Package TO-220 Marking G60N10 Packaging 5

G60N10 Datasheet (1.02 MB)

Preview of G60N10 PDF

Datasheet Details

Part number:

G60N10

Manufacturer:

GOFORD

File Size:

1.02 MB

Description:

N-channel enhancement mode power mosfet.

📁 Related Datasheet

G60N100 - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

1SMA120Z - TSG60N100CE (Taiwan Semiconductor)
1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order.

G60N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N04 - MOSFET (GOFORD)
GOFORD Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G60N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET Description The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low.

G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

TAGS

G60N10 N-Channel Enhancement Mode Power MOSFET GOFORD

Image Gallery

G60N10 Datasheet Preview Page 2 G60N10 Datasheet Preview Page 3

G60N10 Distributor