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G60N04D52

Dual N-Channel Enhancement Mode Power MOSFET

G60N04D52 Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* 100% Avalanche Tested

* RoHS Compliant 40V 35A < 9mΩ < 12mΩ Application

* Power switch

* DC/DC converters D1 D2 G1 G2 S1 S2 Schematic diagram Marking and pin assignment Device G

G60N04D52 Datasheet (827.86 KB)

Preview of G60N04D52 PDF

Datasheet Details

Part number:

G60N04D52

Manufacturer:

GOFORD

File Size:

827.86 KB

Description:

Dual n-channel enhancement mode power mosfet.

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G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET GOFORD

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