G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET

Description

G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET .
The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Specifications

Part number: G60N04D52
Manufacturer: GOFORD
File Size: 827.86 KB
Datasheet: G60N04D52-GOFORD.pdf
Description: Dual N-Channel Enhancement Mode Power MOSFET

Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

G60N04D52 Distributors

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G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET GOFORD

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