G60N04D52 Datasheet, Mosfet, GOFORD

G60N04D52 Features

• Mosfet
• VDS
• ID (at VGS = 10V)
• RDS(ON) (at VGS = 10V)
• RDS(ON) (at VGS = 4.5V)
• 100% Avalanche Tested
• RoHS Compliant 40V 35A < 9mΩ < 1

PDF File Details

Part number:

G60N04D52

Manufacturer:

GOFORD

File Size:

827.86kb

Download:

📄 Datasheet

Description:

Dual n-channel enhancement mode power mosfet. The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of ap

G60N04D52 Application

• Applications General Features
• VDS
• ID (at VGS = 10V)
• RDS(ON) (at VGS = 10V)
• RDS(ON) (at VGS = 4.5V)
<

TAGS

G60N04D52

GOFORD

📁 Related Datasheet

G60N04 - MOSFET (GOFORD)
GOFORD Description The G60N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G60N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N04K - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N04K N-Channel Enhancement Mode Power MOSFET Description The G60N04K uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G60N06T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N06T N-Channel Enhancement Mode Power MOSFET Description The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate cha.

G60N10 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.

G60N100 - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

G60N100BNTD - NPT IGBT (Fairchild Semiconductor)
FGL60N100BNTD — 1000 V, 60 A NPT Trench IGBT FGL60N100BNTD 1000 V, 60 A NPT Trench IGBT Features • High Speed Switching • Low Saturation Voltage: VCE.

1SMA120Z - TSG60N100CE (Taiwan Semiconductor)
1SMA4741 thru 1SMA200Z SURFACE MOUNT SILICON ZENDER DIODE PRODUCT SUMMARY 1.0 Watts Surface Mount FEATURES For surface mounted applications in order.

G60N10T - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G60N10T N-Channel Enhancement Mode Power MOSFET Description The G60N10T uses advanced trench technology to provide excellent RDS(ON) , low gate char.