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G60N04D52 - Dual N-Channel Enhancement Mode Power MOSFET

G60N04D52 Description

G60N04D52 Dual N-Channel Enhancement Mode Power MOSFET .
The G60N04D52 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G60N04D52 Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

📥 Download Datasheet

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Datasheet Details

Part number
G60N04D52
Manufacturer
GOFORD
File Size
827.86 KB
Datasheet
G60N04D52-GOFORD.pdf
Description
Dual N-Channel Enhancement Mode Power MOSFET

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Dual N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G60N04D52-like datasheet