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G60N06, G60N06T - N-Channel Enhancement Mode Power MOSFET

G60N06 Description

G60N06T N-Channel Enhancement Mode Power MOSFET .
The G60N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G60N06 Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* 100% Avalanche Tested

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: G60N06, G60N06T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
G60N06, G60N06T
Manufacturer
GOFORD
File Size
773.76 KB
Datasheet
G60N06T-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: G60N06, G60N06T.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-Channel Enhancement Mode Power MOSFET GOFORD
GOFORD G60N06-like datasheet