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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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M27V102 1 Mbit (64Kb x 16) Low Voltage UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION: – A

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M27W102 1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 70ns at VCC = 3.0V to 3

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M27W512 512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE

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M27V512 512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION:

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M29F102BB 1 Mbit (64Kb x16, Boot Block) Single Supply Flash Memory FEATURES SUMMARY ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SINGLE 5V±10% SUPPLY VOLTAG

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M29W512B 512 Kbit (64Kb x8, Bulk) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS A

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FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (1010) read/w

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FM25CL64 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited Read/Write Cycles • 45 Ye

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BL24S64 64Kbits (8,192×8) Features  Compatible with all I2C bidirectional data transfer protocol  Memory array: – 64 Kbits (8 Kbytes) of EEPROM – Pa

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ASAHI KASEI [AK93C85A/95A/10A] AK93C85A / 95A / 10A 16K / 32K / 64Kbit Serial CMOS EEPROM Features
ADVANCED CMOS EEPROM TECHNOLOGY
READ/WRIT

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M29F100T M29F100B 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

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M29F100BT M29F100BB 1 Mbit (128Kb x8 or 64Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM,

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M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R

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M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R

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www.DataSheet4U.com HANBit HMN88D Non-Volatile SRAM MODULE 64Kbit (8K x 8-Bit),28Pin DIP, 5V Part No. HMN88D GENERAL DESCRIPTION The HMN88D Nonvol

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CAT28LV65 64 kb CMOS Parallel EEPROM Description The CAT28LV65 is a low voltage, low power, CMOS Parallel EEPROM organized as 8K x 8−bits. It require

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