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M27C512 512 Kbit (64K x8) UV EPROM and OTP EPROM Features ■ 5V ± 10% supply voltage in read operation ■ Access time: 45 ns ■ Low power “CMOS” consump

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N64S0818HDA/N6

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FM25CL64 64Kb FRAM Serial 3V Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • Unlimited Read/Write Cycles • 45 Ye

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AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N64S0818HDA/N6

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ASAHI KASEI [AK93C85A/95A/10A] AK93C85A / 95A / 10A 16K / 32K / 64Kbit Serial CMOS EEPROM Features
ADVANCED CMOS EEPROM TECHNOLOGY
READ/WRIT

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INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina

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M27W102 1 Mbit (64Kb x16) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION READ ACCESS TIME: – 70ns at VCC = 3.0V to 3

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BL24S64 64Kbits (8,192×8) Features  Compatible with all I2C bidirectional data transfer protocol  Memory array: – 64 Kbits (8 Kbytes) of EEPROM – Pa

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M59BW102 1 Mbit (64Kb x16, Burst) Low Voltage Flash Memory PRELIMINARY DATA s 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS SEQUE

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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EEPROM Serial 64-Kb I2C N24C64 Description The N24C64 is a EEPROM Serial 64−Kb I2C device, organized internally as 256 pages of 32 bytes each. This de

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FM24C64 64Kb FRAM Serial Memory Features 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (1010) read/w

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M28F512 512K (64K x 8, Chip Erase) FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLE

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M27V512 512 Kbit (64Kb x8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 100ns LOW POWER CONSUMPTION:

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M58WRxxxKT/B - 32Mb - 64Mb, 1.8V, x16 Multi Bank Burst, Flash Features M58WRxxxKT/B - 32Mb & 64Mb, 1.8V, x16 Multi Bank Burst, Flash M58WR032KT, M58WR

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M27C1024 1 Mbit (64Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Cur

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www.DataSheet4U.com M50FLW080A M50FLW080B 8-Mbit (13 x 64-Kbyte Blocks + 3 × 16 × 4 Kbyte Sectors) 3-V supply, Firmware Hub / low-pin-count Flash mem

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INTEGRATED CIRCUITS 89C51RB2/89C51RC2/89C51RD2 80C51 8-bit Flash microcontroller family 16KB/32KB/64KB ISP/IAP Flash with 512B/512B/1KB RAM Prelimina

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M29W102BT M29W102BB 1 Mbit (64Kb x16, Boot Block) Low Voltage Single Supply Flash Memory s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and R

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www.DataSheet4U.com HANBit HMN88D Non-Volatile SRAM MODULE 64Kbit (8K x 8-Bit),28Pin DIP, 5V Part No. HMN88D GENERAL DESCRIPTION The HMN88D Nonvol

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