6530 Datasheet | Specifications & PDF Download

RLT65300T TECHNICAL DATA High Power Visible Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 650 nm • Optical Ouput P

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Agilent AMMC-6530 5– 30 GHz Image Reject Mixer Data Sheet Description Agilent’s AMMC-6530 is an image reject mixer that operates from 5 to 30 GHz. Th

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4N55, 5962-87679, HCPL-553x, HCPL-653x, HCPL-257K, HCPL-655x, 5962-90854, HCPL-550x1 Hermetically Sealed, Transistor Output Optocouplers for Analog an

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FDMQ86530L Quad N-Channel PowerTrench® MOSFET April 2013 FDMQ86530L GreenBridgeTM Series of High-Efficiency Bridge Rectifiers N-Channel PowerTrench

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isc N-Channel MOSFET Transistor R6530ENX FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Re

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FDD6530A FDD6530A 20V N-Channel PowerTrench® MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the

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FGA6530WDF — 650 V, 30 A Field Stop Trench IGBT FGA6530WDF 650 V, 30 A Field Stop Trench IGBT August 2015 Features • Maximum Junction Temperature :

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Alfa-MOS Technology General Description AFN6530S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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FDD6530A July 2001 FDD6530A 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve th

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Agilent AMMP-6530 5– 30 GHz Image Reject Mixer Data Sheet w w w . D a t a S h e e t 4 U . c o Features • 5x5 mm Surface Mount Package • Broad Band P

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RLT6530G Features • • • • • Visible Laser Diode ABSOLUTE MAXIMUM RATINGS ( Tc=25ºC ) DESCRIPTION Optical Power (mW) Operation Temperature (ºC) Storag

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AON6530 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge

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AMMP-6530 5–30 GHz Image Reject Mixer Data Sheet Description Avago Technologies’ AMMP-6530 is an image reject mixer that ­operates from 5 GHz to 30 G

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Note •PPleleaasseerreeaaddrraatitninggaanndd CCAAUUTTIOIONN((foforrsstotorraaggee,,ooppeerraatitningg,,rraatitningg,,ssooldldeerriningg,,mmoouunntit

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isc N-Channel MOSFET Transistor R6530ENZ1 FEATURES ·Drain Current –ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-R

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Preliminary No. 5485 CMOS LSI LC665304A, 665306A, 665308A, 665312A, 665316A Four-Bit Single-Chip Microcontrollers with 4, 6, 8, 12, and 16 KB of On-

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,..,commodore ~ semiconductor group ~~@~ MPS 6530 MEMORY, I/O, TIMER ARRAY 6530 (MEMORY, I/O, TIMER ARRAY) DESCRIPTION The 6530 is designed to oper

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