65R600C Datasheet | Specifications & PDF Download

NSF65R600C N-channel 650V Super Junction MOSFET Description NSF65R600C is a N-channel power MOSFET designed according to super junction technology. Th

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GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P 

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100%

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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BRF65R600C Rev.D Jul.-2016 / Descriptions TO-220F N 650V 。 N-CHANNEL 650V Super-Junction Power MOSFET in a TO-220F Plastic Package. DATA SHEET

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P 

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BRD65R600C Rev.D Jul.-2016 / Descriptions TO-252 N 650V 。 N-CHANNEL 650V Super-Junction Power MOSFET in a TO-252 Plastic Package. DATA SHEET /

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GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P 

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GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P 

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Isc N-Channel MOSFET Transistor IPB65R600C6 ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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BRI65R600C Rev.D Jul.-2016 / Descriptions TO-251 N 650V 。 N-CHANNEL 650V Super-Junction Power MOSFET in a TO-251 Plastic Package. DATA SHEET /

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isc N-Channel MOSFET Transistor IPP65R600C6，IIPP65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switchi

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isc N-Channel MOSFET Transistor IPD65R600C6,IIPD65R600C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.6Ω ·Enhancement mode: ·100% avalanch

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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GIM@?N + =L 9 D- PA <= 1 =E A ;G F > =;L2J 9 FK A K L G J GGD+ - 1     4 G G D + - 1 Y  . G O=J2J 9 FK A K L G J '. P 

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TPA65R600C, TPB65R600C, TPC65R600C, TPD65R600C, TPP65R600C, TPU65R600C Wuxi Unigroup Microelectronics Company 650V Super-Junction Power MOSFET FEATURE

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.6Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche t

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