Datasheet Details
- Part number
- IPB65R600C6
- Manufacturer
- INCHANGE
- File Size
- 254.01 KB
- Datasheet
- IPB65R600C6-INCHANGE.pdf
- Description
- N-Channel MOSFET
IPB65R600C6 Description
Isc N-Channel MOSFET Transistor IPB65R600C6 *.
IPB65R600C6 Features
* With To-263(D2PAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
IPB65R600C6 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
650
VGSS ID IDM
Gate-Source Voltage
Drain Current-ContinuousTc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
7.3 4.6
18
PD
Total Dissipation @TC=25℃
63
Tch
Max. Operating J
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