Datasheet4U Logo Datasheet4U.com

IPP65R600C6

N-Channel MOSFET

IPP65R600C6 Features

* Static drain-source on-resistance: RDS(on) ≤0.6Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while not

IPP65R600C6 General Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 7.3 IDM Drain Current-Single Pulsed 18 PD Tot.

IPP65R600C6 Datasheet (240.37 KB)

Preview of IPP65R600C6 PDF

Datasheet Details

Part number:

IPP65R600C6

Manufacturer:

INCHANGE

File Size:

240.37 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPP65R600C6 Power Transistor (Infineon Technologies)

IPP65R600E6 MOSFET (Infineon Technologies)

IPP65R600E6 N-Channel MOSFET (INCHANGE)

IPP65R660CFD Power Transistor (Infineon Technologies)

IPP65R660CFD N-Channel MOSFET (INCHANGE)

IPP65R660CFDA CFDA Power Transistor (Infineon Technologies)

IPP65R045C7 MOSFET (Infineon)

IPP65R045C7 N-Channel MOSFET (INCHANGE)

IPP65R065C7 MOSFET (Infineon)

IPP65R065C7 N-Channel MOSFET (INCHANGE)

TAGS

IPP65R600C6 N-Channel MOSFET INCHANGE

Image Gallery

IPP65R600C6 Datasheet Preview Page 2

IPP65R600C6 Distributor