Datasheet4U Logo Datasheet4U.com

IPP65R190E6

N-Channel MOSFET

IPP65R190E6 Features

* Static drain-source on-resistance: RDS(on) ≤0.19Ω

* Enhancement mode

* Fast Switching Speed

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* DESCRIPTION

* Provide all benefits of a fast switching SJ MOSFET while no

IPP65R190E6 General Description


*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 20.2 IDM Drain Current-Single Pulsed 66 PD To.

IPP65R190E6 Datasheet (240.69 KB)

Preview of IPP65R190E6 PDF

Datasheet Details

Part number:

IPP65R190E6

Manufacturer:

INCHANGE

File Size:

240.69 KB

Description:

N-channel mosfet.

📁 Related Datasheet

IPP65R190E6 - Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS E6 650V CoolMOS™ E6 Power Transistor IPx65R190E6 Data Sheet Rev. 2.1, 2018-02-28 Fina.

IPP65R190C6 - Power Transistor (Infineon Technologies)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 650V CoolMOS™ C6 Power Transistor IPx65R190C6 Data Sheet Rev. 2.0, 2011-05-09 Fina.

IPP65R190C6 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP65R190C6，IIPP65R190C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP65R190C7 - MOSFET (Infineon)
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 650V CoolMOS™ C7 Power Transistor IPP65R190C7 Data Sheet Rev. 2.1 Final Power Man.

IPP65R190C7 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP65R190C7，IIPP65R190C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Switch.

IPP65R190CFD - CFD2 Power Transistor (Infineon Technologies)
#$ % &' '( )* + #$ , - #$ . #$ , #$ , #$ & 3 % 43 % 4% & 4 5 ,4 4 % 56 7 89 5 5 5 :3 % 4' : %5 % 48 55 % % 4% & .

IPP65R190CFD - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor IPP65R190CFD，IIPP65R190CFD ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.19Ω ·Enhancement mode ·Fast Swit.

IPP65R190CFDA - CFDA Power Transistor (Infineon Technologies)
#$% # ' (' & ) #$% 1 & 21 & 2& 2 3 * 2 2 & 34 5 67 3 3 3 81 & 2' 8& 3 & 26 33 & & 2& '& 23 8 &2 6 & 2 1 8 81 '&.

TAGS

IPP65R190E6 N-Channel MOSFET INCHANGE

Image Gallery

IPP65R190E6 Datasheet Preview Page 2

IPP65R190E6 Distributor