697-3 Datasheet | Specifications & PDF Download

DESCRIPTION PT16976 is a linear LED controller for automotive exterior lighting. The controller drives an external NPN transistor to regulate a curren

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HT81697 Boosted Class D/AB Amplifier 30WD/AB 30W Boosted Mono Class D/AB Amplifier ◼ FEATURES ・Anti-Clipping Function (ACF) ・Spread spectrum technol

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AON6978 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (S

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AON6970 30V Dual Asymmetric N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS •

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HT8696, HT8697 9.5WD  ・(Anti-Clipping Function, ACF) ・， ・ 2×9.5W (VDD=8.5V, RL=4Ω, THD+N=10%, Class D) 2×6.7W (VDD=7.2V, RL=4Ω, THD+N=10%, Clas

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MK2697 MK2697 - QR PWM DESCRIPTION FEATURES MK2697 PD/ QR  PWM 。 VCC (9V-90V) PD/PPS 3.3V-23V   。  ， PD/ ，。  ，  DCM/QR。 bu

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OPB685-3, OPB686, OPB687, OPB695, OPB696, OPB697, OPB698 Series OPB685 Features:  Photologic® output  Four output options  Mechanical switch repl

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OPB685-3, OPB686, OPB687, OPB695, OPB696, OPB697, OPB698 Series OPB685 Features:  Photologic® output  Four output options  Mechanical switch repl

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NTE5693/NTE5695/NTE5697 NTE56022/NTE56024/NTE56026 TRIAC, 40 Amp Description: This NTE 40 Amp series medium power TRIACs are bi–directional triode thy

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65V N-Channel MOSFETs PDD6976-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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Date:- 16th October 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N6974HK020 to N6974HK060 Absolute Maximum Ratings VDRM VDSM VRR

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65V N-Channel MOSFETs PDS6976-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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65V N-Channel MOSFETs PDC6974X-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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65V N-Channel MOSFETs PDC6976X-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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65V N-Channel MOSFETs PDF6974-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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Date:- 16th October 2014 Data Sheet Issue:- 3 Wespack Phase Control Thyristor Types N6974HK020 to N6974HK060 Absolute Maximum Ratings VDRM VDSM VRR

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65V N-Channel MOSFETs PDP6974-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology

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65V N-Channel MOSFETs PDC6978X-5 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technolog

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M54/74HC696/697 M54/74HC698/699 HC696/698 U/D DECADE COUNTER/REGISTER (3-STATE) HC697/699 U/D 4 BIT BINARY COUNTER/REGISTER (3-STATE) . . . . . . . .

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