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6MBP200RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss

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New Intelligent Power Modules (R Series) Atsushi Yamaguchi Hiroaki Ichikawa 1. Introduction The equipment of power electronics application is compris

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6MBP30RH060 IGBT-IPM R series s Features • Low power loss and soft switching • High performance and high reliability IGBT with overheating protection

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MOSEL VITELIC V54C3256(16/80/40)4V(T/S/B) 256Mbit SDRAM 3.3 VOLT, TSOP II / SOC BGA / WBGA PACKAGE 16M X 16, 32M X 8, 64M X 4 PRELIMINARY 6 System

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http://www.fujielectric.com/products/semiconductor/ 6MBP300VEA060-50 IGBT Modules IGBT MODULE (V series) 600V / 300A / IPM Features • Temperature

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IS66/67WVE1M16EALL/EBLL/ECLL IS66/67WVE1M16TALL/TBLL/TCLL 16Mb Async/Page PSRAM NOVEMBER 2015 Overview The IS66/67WVE1M16EALL/BLL/CLL and IS66/67WV

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Rev. 1.0, Nov. 2010 K8A56(57)ET(B)(Z)C 256Mb C-die NOR FLASH 16M x16, Synch Burst Multi Bank SLC NOR Flash datasheet SAMSUNG ELECTRONICS RESERVES TH

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http://www.fujielectric.com/products/semiconductor/ 6MBP15VSC060-50 IGBT Modules IGBT MODULE (V series) 600V / 15A / IPM Features Low-side IGBTs a

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6MBP 75RA-120 Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Volta

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6MBP 200RA-060 IGBT IPM 600V 6×200A Intelligent Power Module ( R-Series ) n Maximum Ratings and Characteristics n Outline Drawing • Absolute Maxi

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M25PE16 Serial Flash Embedded Memory Features Micron M25PE16 16Mb 3V Serial Flash Memory 16Mb, Page-Erasable Serial Flash Memory with Byte-Alterabilit

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KBE00S003M-D411 MCP MEMORY MCP Specification 1Gb NAND*2 + 256Mb Mobile SDRAM*2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PROD

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6MBI150U2B-060 IGBT MODULE (U series) 600V / 150A IGBT Modules Features · Low VCE(sat) · Compact Package www.DataSheet4U.com · P.C. Board Mount Mod

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48SD1616 256 Mb SDRAM www.DataSheet4U.com 4-Meg X 16-Bit X 4-Banks Logic Diagram (One Amplifier) Memory FEATURES: • 256 Megabit ( 4-Meg X 16-Bit X

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www.DataSheet4U.com 256Mb DDR SDRAM Specification A2S56D20CTP A2S56D30CTP A2S56D40CTP Powerchip Semiconductor Corp. No.12, Li-Hsin Rd.1, Science-bas

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www.DataSheet4U.com 256Mb DDR SDRAM Specification A2S56D20CTP A2S56D30CTP A2S56D40CTP Powerchip Semiconductor Corp. No.12, Li-Hsin Rd.1, Science-bas

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www.DataSheet4U.com 256Mb Synchronous DRAM based on 4M x 4Bank x16 I/O 256M (16Mx16bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks

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6MBP300RA060 IGBT-IPM R series Features · Temperature protection provided by directly detecting the junction temperature of the IGBTs · Low power loss

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25Q16BSIG FEATURES ◆ 16M-bit Serial Flash -2048K-byte -256 bytes per programmable page ◆ Standard, Dual, Quad SPI -Standard SPI: SCLK, CS#, SI, SO, W

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