6N80A Datasheet | Specifications & PDF Download

Silan Microelectronics SVF6N80AD(K)(F)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80AD(K)(F) is an N-channel enhancement mode pow

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SSS6N80A-VB www.VBsemi.com SSS6N80A-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (

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Silan Microelectronics SVF6N80AD(K)(F)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80AD(K)(F) is an N-channel enhancement mode pow

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Silan Microelectronics SVF6N80AD(K)(F)_Datasheet 6A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF6N80AD(K)(F) is an N-channel enhancement mode pow

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Silicon N-Channel Power MOSFET CS6N80 A0H ○R General Description： CS6N80 A0H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Ope

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isc N-Channel MOSFET Transistor 6N80A ·FEATURES ·Drain Current ID= 6A@ TC=25℃ ·Drain Source Voltage: VDSS= 800V(Min) ·Static Drain-Source On-Resista

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Silicon N-Channel Power MOSFET ○R CS6N80 A4R General Description： CS6N80 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-ali

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi

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Silicon N-Channel Power MOSFET CS6N80 A8 ○R General Description： CS6N80 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-alig

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Silicon N-Channel Power MOSFET CS6N80 ARH ○R General Description： CS6N80 ARH, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-al

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Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.4Ω(Max) ·Fast Swi

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Standard Power MOSFET IXTH / IXTM 6N80 IXTH / IXTM 6N80A N-Channel Enhancement Mode V DSS I D25 R DS(on) 800 V 6 A 1.8 Ω 800 V 6 A 1.4 Ω Symbo

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Advanced Power MOSFET SSF6N80A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extend

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Main Product Characteristics VDSS 800V RDS(on) 2.2Ω (typ.) ID 5.5A TO-262 Features and Benefits  Advanced MOSFET process technology  Special

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