70N06 Datasheet | Specifications & PDF Download

www.DataSheet4U.com UNISONIC TECHNOLOGIES CO., LTD 70N06 70 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 70N06 is n-channel e

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www.DataSheet4U.com DFP70N06 N-Channel MOSFET Features Low RDS(on) (0.014 )@VGS=10V Low Gate Charge (Typical 70nC) Low Crss (Typical 160pF) Improved

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Stati

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 70N06 ·DESCRIPTION ·Drain Current ID= 70A@ TC=25℃ ·Drain Source Vol

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Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 VDSS = ID25 = RDS(on)  60V 270A 3.1m N-

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·St

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JMTG170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features  60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advan

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S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JED

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SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.014 ID (A) 70a TO-220AB D TO-2

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www.DataSheet4U.com IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel

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SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Feature

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S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JED

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0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 1.Description The HS70N06 is three-terminal silicon device with current conduction capability of about

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www.DataSheet4U.com SUP/SUB70N06-14 Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.014 ID (A) 7

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=57A Rds(on)(typ)=11.5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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JMTG170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features  60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advan

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HRP70N06K HRP70N06K 60V N-Channel Trench MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Excellent Switching Charac

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Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process.

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www.DataSheet4U.com IPB070N06L G IPP070N06L G OptiMOS® Power-Transistor Features • For fast switching converters and sync. rectification • N-channel

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SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Feature

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