isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Stati

SEMICONDUCTOR RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM December 1995 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Feature

S E M I C O N D U C T O R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Packages JED

TEMIC Siliconix SMW70N06·14 N-Channel Enhancement-Mode lransistor Product Summary V(BR)DSS (V) 60 rnS(on) (Q) 0.014 TO-247AD )0 I In (A) 70 l

isc N-Channel MOSFET Transistor INCHANGE Semiconductor RFP70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·St

Advance Technical Information TrenchT3TM HiperFETTM Power MOSFET IXFA270N06T3 IXFP270N06T3 IXFH270N06T3 VDSS = ID25 = RDS(on)  60V 270A 3.1m N-

CEP70N06/CEB70N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for ex

PRELIMINARY SemiWell Semiconductor SFP70N06 N-Channel MOSFET Features ■ ■ Low RDS(on) (0.014Ω )@VGS=10V Symbol ◀ { { 2. Drain Low Gate Charge (

JMTG170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features  60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advan

JMTG170N06A Description JMT N-channel Enhancement Mode Power MOSFET Features  60V,40A RDS(ON) <15mΩ @ VGS = 10V RDS(ON) <21mΩ @ VGS = 4.5V  Advan

isc N-Channel MOSFET Transistor INCHANGE Semiconductor 70N06 DESCRIPTION ·Drain Current ID=70A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Stati

ME70N06T /ME70N06T-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION The ME70N06T is the N-Channel logic enhancement mode power field effect transi

BR70N06 Rev.D Nov.-2015 DATA SHEET / Descriptions TO-220 N MOS 。N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features RDS(on)，，Crss ，。 Low

RFF70N06 Data Sheet March 1999 File Number 4073.2 25A, 60V, 0.025 Ohm, N-Channel Power MOSFET The RFF70N06 N-Channel power MOSFET is manufactured usi

Data Sheet September 2013 RFP70N06 N-Channel Power MOSFET 60V, 70A, 14 mΩ These are N-Channel power MOSFETs manufactured using the MegaFET process.

0 Amps, 60 Volts N-CHANNEL MOSFET HS70N06PA 1.Description The HS70N06 is three-terminal silicon device with current conduction capability of about

www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enha

Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr N06T WFP70 P70N Silicon N-Channel MOSFET Features � � � � � 68A,60V, RDS(on)(Max18mΩ

SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=70V,ID=57A Rds(on)(typ)=11.5m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

Silicon N-Channel Power MOSFET ○R CS70N06 A4 General Description： CS70N06 A4, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high den