750V Datasheet | Specifications & PDF Download

SGM820PB8B3TFM Datasheet 820A, 750V IGBT MODULE 1.DESCRIPTION SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-densi

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STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 32-bit Arm® Cortex®-M7 480MHz MCUs, 128 Kbyte flash, 1 Mbyte RAM, 46 com. and analog interfaces, crypt

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SGM950PB8B3TFM Datasheet 950A, 750V IGBT MODULE 1.DESCRIPTION SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-densi

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AIMDQ75R008M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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Silan Microelectronics SGTQ200V75SDB1PW_Datasheet 200A, 750V FIELD STOP IGBT DESCRIPTION The SGTQ200V75SDB1PW field stop IGBT adopts Silan Field Sto

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AIMBG75R060M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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Public AIMDQ75R060M2H Final datasheet SiC MOSFET CoolSiC™ Automotive Power Device 750 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide

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Public AIMZA75R008M1H Final datasheet MOSFET CoolSiC™ Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide tec

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www.DataSheet4U.com GANGES TECHNOLOGY Ferrite Chip Bead For High Current Applications HCB Series P1. www.DataSheet4U.com High Current Chip Bead 1

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AIMZA75R040M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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LT1812 3mA, 100MHz, 750V/µs Operational Amplifier with Shutdown FEATURES s s s s s s s s s s s s s s DESCRIPTIO U APPLICATIO S s s s s s s 100MHz

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750V-5.9mW SiC FET DATASHEET UJ4SC075006K4S CASE CASE D (1) Rev. B, July 2021 Description The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET. It is ba

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AIMZA75R027M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG75R020M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW

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Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 3750Vrms 1ch Gate Driver Providing Galvanic Isolation BM60015FV-LB Gene

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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Plastic Fiber Optic Transmitter Diode Plastic Connector Housing SFH 750 SFH 750V Features • 2.2 mm aperture holds standard 1000 micron plastic fiber

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AOM015V75X2Q 750 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with

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