750V Datasheet | Specifications & PDF Download

STM32H750VB STM32H750ZB STM32H750IB STM32H750XB 32-bit Arm® Cortex®-M7 480MHz MCUs, 128 Kbyte flash, 1 Mbyte RAM, 46 com. and analog interfaces, crypt

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SGM820PB8B3TFM Datasheet 820A, 750V IGBT MODULE 1.DESCRIPTION SGM820PB8B3TFM is a six-cell topology module based on Silan self-developed high-densi

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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750V-5.9mW SiC FET DATASHEET UJ4SC075006K4S CASE CASE D (1) Rev. B, July 2021 Description The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET. It is ba

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DATASHEET UJ4C075033B7S 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075033B7S Package D2PAK-7L Marking UJ4C075033B7S Silicon Carbide (

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AIMBG75R020M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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Public AIMZA75R008M1H Final datasheet MOSFET CoolSiC™ Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide tec

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DATASHEET UJ4C075044B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 750 V, 44 mohm Rev. C, January 2025 Description 1 7

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Silan Microelectronics SGTQ200V75SDB1PW_Datasheet 200A, 750V FIELD STOP IGBT DESCRIPTION The SGTQ200V75SDB1PW field stop IGBT adopts Silan Field Sto

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AOM015V75X2Q 750 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 5.9 mohm SiC JFET w/ Si MOSFET UJ4SC075006K4S Description The UJ4SC0

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW

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AIMZA75R027M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMBG75R060M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 The 750 V CoolSiC™ is built over the solid silicon carbide technology developed in In

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AIMDQ75R008M1H MOSFET CoolSiCª Automotive Power Device 750 V G1 PG-HDSOP-22 The 750 V CoolSiC™ is built over the solid silicon carbide technology

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Public AIMDQ75R060M2H Final datasheet SiC MOSFET CoolSiC™ Automotive Power Device 750 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide

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INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The

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www.DataSheet4U.com Contacts: TELCONA AG,Head Office: Höri, Switzerland TELCONA AG,Sales Office: Sinsheim, Germany TELCONA AG,Sales Office: Lésigny,

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Rev. Oct. 08 Company Overview AEM is a global high-tech manufacturer redefining the standards of quality and value in the electronic components indus

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SGM950PB8B3TFM Datasheet 950A, 750V IGBT MODULE 1.DESCRIPTION SGM950PB8B3TFM is a six-cell topology module based on Silan self-developed high-densi

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