UJ4SC075006K4S Datasheet - UnitedSiC

UJ4SC075006K4S 750V SiC FET

The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” .

UJ4SC075006K4S Features

* 1 2 34 G (4) KS (3) S (2) w On-resistance RDS(on): 5.9mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 440nC w Low body diode VFSD: 1.03V w Low gate charge: QG =164nC w Threshold voltage VG(th): 4.7V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD

UJ4SC075006K4S-UnitedSiC.pdf