UJ4SC075018B7S

SiC FET

Qorvo

UJ4SC075018B7S Features

* 1 7 Part Number UJ4SC075018B7S G (1) KS (2) Package D2PAK-7L S (3-7) Marking UJ4SC075018B7S w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 125nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4

UJ4SC075018B7S General Description

The UJ4SC075018B7S is a 750V, 18mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” t.

UJ4SC075018B7S Datasheet (657.75 KB)

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Part number:

UJ4SC075018B7S

Manufacturer:

Qorvo

File Size:

657.75 KB

Description:

Sic fet.

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UJ4SC075018B7S SiC FET Qorvo

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UJ4SC075018B7S Features

UJ4SC075018B7S General Description

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