w On-resistance RDS(on): 5.4mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 440nC w Low body diode VFSD: 1.03V w Low gate charge: QG =164nC w Threshold voltage VG(th): 4.7V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w MO-229 package for faster switching, clean gate waveforms
Typical.