UJ4SC075011B7S Datasheet - UnitedSiC

UJ4SC075011B7S SiC Cascode JFET

The UJ4SC075011B7S is a 750V, 11mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” t.

UJ4SC075011B7S Features

* w On-resistance RDS(on): 11mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 274nC w Low body diode VFSD: 1.1V w Low gate charge: QG =75nC w Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w D2PAK-7

UJ4SC075011B7S-UnitedSiC.pdf