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UJ4SC075018L8S Datasheet - Qorvo

SiC Cascode JFET

UJ4SC075018L8S Features

* w On-resistance RDS(on): 18mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 128nC w Low body diode VFSD: 1.14V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected, HBM class 2 w MO-

UJ4SC075018L8S General Description

The UJ4SC075018L8S is a 750V, 18mΩ G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows use of off-the-shelf gate drivers .

UJ4SC075018L8S Datasheet (894.46 KB)

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Datasheet Details

Part number:

UJ4SC075018L8S

Manufacturer:

Qorvo

File Size:

894.46 KB

Description:

Sic cascode jfet.
DATASHEET Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TOLL, 750 V, 18 mohm Rev B, January 2025 UJ4SC075018L8S TAB 1 8 TAB 8 1.

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UJ4SC075018L8S SiC Cascode JFET Qorvo

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