UJ4SC075011K4S - SiC JFET
The UJ4SC075011K4S is a 750 V, 11 mW G4 SiC FET.
It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.
The device’s standard gate-drive characteristics allows for a true “drop-in replacement”
UJ4SC075011K4S Features
* On-Resistance RDS(on) : 11 mW (typ)
* Operating Temperature: 175 °C (Max)
* Excellent Reverse Recovery: Qrr = 288 nC
* Low Body Diode VFSD: 1.1 V
* Low Gate Charge : QG = 75 nC
* Threshold Voltage VG(th): 4.5 V (typ) Allowing 0 to 15 V Drive
