UJ4SC075011K4S Datasheet - ON Semiconductor

SiC JFET

UJ4SC075011K4S Features

* On-Resistance RDS(on) : 11 mW (typ)

* Operating Temperature: 175 °C (Max)

* Excellent Reverse Recovery: Qrr = 288 nC

* Low Body Diode VFSD: 1.1 V

* Low Gate Charge : QG = 75 nC

* Threshold Voltage VG(th): 4.5 V (typ) Allowing 0 to 15 V Drive

UJ4SC075011K4S General Description

The UJ4SC075011K4S is a 750 V, 11 mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement”.

UJ4SC075011K4S Datasheet (424.85 KB)