UJ4SC075009K4S Datasheet (UnitedSiC)

UJ4SC075009K4S, 750V SiC FET

The UJ4SC075009K4S is a 750V, 9mW G4 SiC FET.

It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to

UJ4SC075009K4S Features

* 1 2 34 G (4) KS (3) S (2) w On-resistance RDS(on): 9mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 322nC w Low body diode VFSD: 1.1V w Low gate charge: QG =75nC w Threshold voltage VG(th): 4.5V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD pro