Cascode Datasheet | Specifications & PDF Download

DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm UF3C120150K4S Description This SiC cascode JFET co-packages

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 150 mohm UJ3C120150K3S Description This SiC FET device is based on a

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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C a Process 94 NDF9401-10 N-Channel Monolithic Cascode Dual JFETs General Description The NDF9401 thru NDF9410 series of N-channel mono- lithic ca

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium ni

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Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only

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DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev. C, Jan 2025 Description 1 7 T

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm UJ3C120040K3S Description This SiC FET device is based on a u

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 650 V, 27 mohm UF3SC065030B7S Description This SiC FET device is based on a

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NTE724 Integrated Circuit Differential/Cascode Amplifier Description: The NTE724 is a differential/cascode amplifier in an 8–Lead TO5 type metal can p

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Semiconductor CT T ODU CEMEN 7 R P E A 74 T L 7 E OL REP 00-442OBS ENDED 8 1 m s.co MM ions ECO pplicat p@harri R O N ral A centap Cent : Call or ema

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www.DataSheet4U.com S E M I C O N D U C T O R CA3028A, CA3028B, CA3053 Differential/Cascode Amplifiers for Commercial and Industrial Equipment from D

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DATASHEET Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TOLL, 750 V, 18 mohm Rev B, January 2025 UJ4SC075018L8S TAB 1 8 TAB 8 1

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