UJ3C120150K3S Datasheet (onsemi)

UJ3C120150K3S, SiC Cascode JFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UJ3C120150K3S Features

* Typical On-resistance RDS(on),typ: 150 mW

* Maximum Operating Temperature of 175 C

* Excellent Reverse Recovery

* Low Gate Charge

* Low Intrinsic Capacitance

* ESD Protected: HBM Class 2

* This Device is Pb-Free, Halogen Free and is RoHS Compliant Typical Applications