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UJ3C065030B3 MOSFET

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Description

DATASHEET UJ3C065030B3 TAB 2 3 1 G (1) TAB D (2) S (3) 650V-27mW SiC FET Rev.B, April 2022 .
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a.

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Datasheet Specifications

Part number
UJ3C065030B3
Manufacturer
UnitedSiC
File Size
623.38 KB
Datasheet
UJ3C065030B3-UnitedSiC.pdf
Description
MOSFET

Applications

* w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ3C065030B3 Rev. B, April 2022 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single

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