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UJ3C065030B3

MOSFET

UJ3C065030B3 Features

* w Typical on-resistance RDS(on),typ of 27mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number UJ3C065030B3 Package D2PAK-3L Marking UJ3C065030B3 Typical applications w EV c

UJ3C065030B3 General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UJ3C065030B3 Datasheet (623.38 KB)

Preview of UJ3C065030B3 PDF

Datasheet Details

Part number:

UJ3C065030B3

Manufacturer:

UnitedSiC

File Size:

623.38 KB

Description:

Mosfet.

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UJ3C065030B3 MOSFET UnitedSiC

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