UJ3C120070K4S Datasheet - UnitedSiC

Silicon Carbide Cascode JFET

UJ3C120070K4S Features

* w On-resistance RDS(on): 70mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 113nC w Low body diode VFSD: 1.41V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5.0V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM

UJ3C120070K4S General Description

The UJ3C120070K4S is a 1200V, 70mW G3 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” t.

UJ3C120070K4S Datasheet (651.02 KB)

UJ3C120070K4S Datasheet Preview — Preview of UJ3C120070K4S PDF

Datasheet Details

Part number:

UJ3C120070K4S

Manufacturer:

UnitedSiC

File Size:

651.02 KB

Description:

Silicon carbide cascode jfet.
DATASHEET UJ3C120070K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 70 mohm Rev. B, January 20.

📁 Related Datasheet

UJ3C120040K3S 1200V SiC FET (UnitedSiC)

UJ3C120040K3S 1200V SiC Cascode JFET (onsemi)

UJ3C120080K3S MOSFET (UnitedSiC)

UJ3C120150K3S MOSFET (UnitedSiC)

UJ3C120150K3S SiC Cascode JFET (onsemi)

UJ3C065030B3 MOSFET (UnitedSiC)

UJ3C065030K3S MOSFET (UnitedSiC)

UJ3C065080B3 MOSFET (UnitedSiC)

UJ3C065080K3S MOSFET (UnitedSiC)

UJ3C065080T3S SiC Cascode JFET (UnitedSiC)

TAGS

UJ3C120070K4S Silicon Carbide Cascode JFET UnitedSiC

Image Gallery

UJ3C120070K4S Features

UJ3C120070K4S General Description

Datasheet Details

File Size:

Description:

UJ3C120070K4S Distributor