UJ3C120070K4S Datasheet - UnitedSiC

UJ3C120070K4S Silicon Carbide Cascode JFET

The UJ3C120070K4S is a 1200V, 70mW G3 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” t.

UJ3C120070K4S Features

* w On-resistance RDS(on): 70mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 113nC w Low body diode VFSD: 1.41V w Low gate charge: QG = 46nC w Threshold voltage VG(th): 5.0V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM

UJ3C120070K4S-UnitedSiC.pdf