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UJ3C120150K3S Datasheet - UnitedSiC

UJ3C120150K3S - MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device.

The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE

UJ3C120150K3S Features

* w Typical on-resistance RDS(on),typ of 150mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modul

UJ3C120150K3S-UnitedSiC.pdf

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Datasheet Details

Part number:

UJ3C120150K3S

Manufacturer:

UnitedSiC

File Size:

413.56 KB

Description:

Mosfet.

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