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UJ3C120040K3S Datasheet - UnitedSiC

1200V SiC FET

UJ3C120040K3S Features

* G (1) 1 23 S (3) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 Typical applications Part Number UJ3C120040K3S Package TO-247-3L Marking UJ3C120040K3S

UJ3C120040K3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UJ3C120040K3S Datasheet (322.82 KB)

Preview of UJ3C120040K3S PDF

Datasheet Details

Part number:

UJ3C120040K3S

Manufacturer:

UnitedSiC

File Size:

322.82 KB

Description:

1200v sic fet.

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UJ3C120040K3S 1200V SiC FET UnitedSiC

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