UJ3C065080B3 Datasheet - UnitedSiC

UJ3C065080B3 MOSFET

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UJ3C065080B3 Features

* w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Part Number UJ3C065080B3 Package D2PAK-3L Marking UJ3C065080B3 Typical applications w EV c

UJ3C065080B3-UnitedSiC.pdf