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UJ3C120080K3S

MOSFET

UJ3C120080K3S Features

* S (3) Marking UJ3C120080K3S w Typical on-resistance RDS(on),typ of 80mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 Typical applications w EV charging w PV inverters w Switch mod

UJ3C120080K3S General Description

This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFE.

UJ3C120080K3S Datasheet (579.86 KB)

Preview of UJ3C120080K3S PDF

Datasheet Details

Part number:

UJ3C120080K3S

Manufacturer:

UnitedSiC

File Size:

579.86 KB

Description:

Mosfet.
DATASHEET UJ3C120080K3S 1200V-80mW SiC FET Rev. E, August 2021 The UJ3C120080K3S is not recommended for new designs. UJ3C120070K3S is recommended as .

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UJ3C120080K3S MOSFET UnitedSiC

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