75V Datasheet | Specifications & PDF Download

Silan Microelectronics SGTQ75V65FDB2P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB2P7 field stop IGBT adopts Silan Field Stop 5

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6MBI800XV-075V-01 Power Module (X series) 750V / 800A / 6-in-one package ■ Features 7th-generation X-series RC-IGBT(RC-IGBT: Reverse Conducting IGBT)

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TPA9151 275V Common Voltage Difference Amplifier Features Description  Supply Voltage: 4.5 V to 36 V (±2.25 V to ±18 V)  Offset Voltage: ±1 mV Ma

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BSC036NE7NS3 G MOSFET OptiMOSTM3 Power-Transistor, 75 V Features • Optimized technology for synchronous rectification • Ideal for high frequency swit

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BSC036NE7NS3 G MOSFET OptiMOSTM3 Power-Transistor, 75 V Features • Optimized technology for synchronous rectification • Ideal for high frequency swit

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Silan Microelectronics SGTP75V120FDB2PW_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW field stop IGBT adopts Silan Field Sto

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D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS Used advanced

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Silan Microelectronics SGTQ75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTQ75V65FDB1P7 field stop IGBT adopts Silan Field Stop 5

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Silan Microelectronics SGTP75V65SDS1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65SDS1P7 field stop IGBT adopts Silan Field Stop V

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Silan Microelectronics SGTP5T60SD1D(F)(S)_Datasheet 5A, 600V FIELD STOP IGBT DESCRIPTION The SGTP5T60SD1D/F/S field stop IGBT features low conducti

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Silan Microelectronics SGTP75V65FDB1P4B_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P4B field stop IGBT adopts Silan Field Stop

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PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

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Silan Microelectronics SGTP75V120FDB2PW4_Datasheet 75A, 1200V FIELD STOP IGBT DESCRIPTION The SGTP75V120FDB2PW4 field stop IGBT adopts Silan Field S

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Silan Microelectronics SGTP75V65FDB1P7_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P7 field stop IGBT adopts Silan Field Stop V

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AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that is designed to provide

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http://www.fujielectric.com/products/semiconductor/ 7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com

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N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technology • Fast Switching • 175°C Operation Temperature

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Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits TO-220  Advanced MOSFET process technology  Special

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AOD474B 75V N-Channel MOSFET General Description The AOD474B combines advanced trench MOSFET technology with a low resistance package to provide extr

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