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D7509 - 80A 75V N-channel Enhancement Mode Power MOSFET
D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS Used advanced.TLE4275V33 - Linear Voltage Regulator
Linear Voltage Regulator 3.3 V Fixed Output Voltage TLE 4275 V33 Feature Overview • Output voltage 3.3 V ± 2 % • Current capability 400 mA • Stable .AOT472 - 75V N-Channel MOSFET
AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that is designed to provide .85N07 - N-Channel 75V MOSFET
N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technology • Fast Switching • 175°C Operation Temperature .P75N75 - 75V N-Channel MOSFET
PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig.7MBR75VN120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBR75VN120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com.SSF7509 - 75V N-Channel MOSFET
Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits TO-220 Advanced MOSFET process technology Special .7MBR75VR120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBR75VR120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com.7MBR75VB120-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBR75VB120-50 IGBT Modules IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Com.TDA7375V - 2 x 35W dual/quad power amplifier
TDA7375V 2 x 35W dual/quad power amplifier for car radio 1 FEATURES ■ HIGH OUTPUT POWER CAPABILITY: – 2 x 40W max./4 – 2 x 35W/4 EIAJ – 2 x 35W/4.12MBI75VN-120-50 - IGBT Module
IGBT Module series for AT-NPC 3-level 12-in-1 Features Significant Low Power Loss and Size Reduction of Equipment Integrates 3-phase of AT-NPC 3-level.NJM2375V - POWER FACTOR CONTROLLER
NJM2375/A POWER FACTOR CONTROLLER ■ GENERAL DESCRIPTION The NJM2375/A are active power factor controllers, which limit the harmonic current resultin.LTP85N07 - N-Channel 75V MOSFET
N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technology • Fast Switching • 175°C Operation Temperature .NDS03ZD-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs
NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs Product Specifications Nov 2001 Features • • • • • • • .7MBR75VB060-50 - IGBT
http://www.fujielectric.com/products/semiconductor/ 7MBR75VB060-50 IGBT Modules IGBT MODULE (V series) 600V / 75A / PIM Features Low VCE(sat) Comp.BAS116 - 75V Switching SMD Diode
BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge c.V375A12T200A - 375Vin / 5Vout / 200Watts DC-DC Converter Module
.NDS02ZG-M6 - NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V / 1.8V / 2.5V / 3.3V and 5.0V Outputs
NDS Series: 10W / 3.0A DC/DC Converters 36-75V Input 1.5V, 1.8V, 2.5V, 3.3V and 5.0V Outputs Product Specifications Nov 2001 Features • • • • • • • .12MBI75VX-120-50 - Power Devices (IGBT)
6 IGBT V 6th Gen. IGBT Module V-series A compact design allows for greater power output · High performance 6th gen. IGBT/FWD chipset · Tj(max.)=17.EMM5075VU - Ku-Band Power Amplifier MMIC
FEATURES ・High Output Power: Pout=33.0dBm (typ.) ・High Linear Gain: GL=24.0dB (typ.) ・Broad Band: 12.7~15.4GHz ・Impedance Matched Zin/Zout=50Ω ・Small .