Linear Voltage Regulator 3.3 V Fixed Output Voltage TLE 4275 V33 Feature Overview • Output voltage 3.3 V ± 2 % • Current capability 400 mA • Stable

BAS16 Taiwan Semiconductor 150mA, 75V Switching Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge curren

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D7509/FD7509/ID7509/ED7509 80A 75V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power MOSFETS Used advanced

N-Channel 75V MOSFET Features • 100% Avalanched Tested • Low On-Resistance • Trench Process Technology • Fast Switching • 175°C Operation Temperature

Main Product Characteristics VDSS 75V RDS(on) 6.5mohm(typ.) ID 80A Features and Benefits TO-220  Advanced MOSFET process technology  Special

BAS116 Taiwan Semiconductor 200mA, 75V Switching SMD Diode FEATURES ● Low power loss, high efficiency ● Ideal for automated placement ● High surge c

TDA7375V 2 x 35W dual/quad power amplifier for car radio 1 FEATURES ■ HIGH OUTPUT POWER CAPABILITY: – 2 x 40W max./4 – 2 x 35W/4 EIAJ – 2 x 35W/4

CY7C4255V CY7C4275V CY7C4285V 8K/32K/64K × 18 Low Voltage Deep Sync FIFOs 8K/32K/64K × 18 Low Voltage Deep Sync FIFOs Features ■ 3.3 V operation for

Interference Suppression Capacitor MOLDED BOX CONSTRUCTION, SUPPRESSION CAPACITOR, RADIAL LEAD FEATURES • UL, CSA, VDE, CQC, CE, ENEC APPROVALS • “X2”

7MBR75VX120-50 IGBT MODULE (V series) 1200V / 75A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Br

PJP75N75 75V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=11mΩ • Advanced Trench Process Technology • High Density Cell Desig

http://www.fujielectric.com/products/semiconductor/ 6MBP75VBA060-50 IGBT MODULE (V series) 600V / 75A / IPM Features • Temperature protection provid

Main Product Characteristics VDSS 75V RDS(on) 3.3mohm(typ.) ID 170A TO-220 Features and Benefits  Advanced trench MOSFET process technology 

NV Series: 4 - 6W DC/DC Converters 9-36V, 18-36V, 36-72V & 16-75V Inputs 3.3V, 5.0V, 12V, 15V, ±5.0V, ±12V, ±15V & ±24V Outputs Product Specification

DATA SHEET SEMICONDUCTOR BZX84C2V4~BZX84C75 Zener Voltage Regulator Diodes MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds H

BF975NF75B BYD Microelectronics Co., Ltd. 75V N-Channel MOSFET General Description This Power MOSFET device has specifically been designed to minimi

Silan Microelectronics SGTP75V65FDB1P4B_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION The SGTP75V65FDB1P4B field stop IGBT adopts Silan Field Stop

6MBI800XV-075V-01 Power Module (X series) 750V / 800A / 6-in-one package ■ Features 7th-generation X-series RC-IGBT(RC-IGBT: Reverse Conducting IGBT)

AOT472/AOTF472 75V N-Channel MOSFET General Description Product Summary The AOT472 and AOTF472 use a robust technology that is designed to provide