77-Channel Datasheet | Specifications & PDF Download

PF7708B Single Channel WLED Driver with Integrated Dimming MOSFET Preliminary Specification P4        FEATURES  Wide Input Range: 9V to 30V  Curre

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SM4377NSKP Features • 30V/50A, RDS(ON)= 7mΩ (max.) @ VGS=10V RDS(ON)= 9.6mΩ (max.) @ VGS=4.5V • Provide Excellent Qgd x Rds-on • 100% UIS + R Tes

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AON7752 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) • Very Low

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AON7702A 30V N-Channel MOSFET SRFET TM General Description Product Summary SRFETTM AON7702A uses advanced trench technology with a monolithically i

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CD7377CZ 7W×4 1、 CD7377CZ 7W×4 ， （ BTL）、（ BTL＋）。： ● ：2×24W（ BTL，VCC=14.4V，f=1kHz，THD=10%，RL=4） 4×7W（，VCC=14.4V，f=1kHz，THD=10%，RL=4） ● （AV =26d

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isc N-Channel MOSFET Transistor ·DESCRIPTION ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage : VDSS= 1500V(Min) ·100% avalanche tested ·Minimum L

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2SK1277 F-V Series > Features - Include Fast Recovery Diode - High Voltage - Low Driving Power N-channel MOS-FET 250V 0,12Ω 30A 150W > Outline Dr

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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ISO7760, ISO7761, ISO7762, ISO7763 SLLSER1G – AUGUST 2017 – REVISED JUNE 2023 ISO776x High-speed, robust EMC, reinforced six-channel digital isolators

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2SK3774-01L,S,SJ N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) 200406 FUJI POWER MOSFET Super FAP-G Series Features High speed switching No

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2SK1773 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Fast Switching Speed ·Minimum Lot

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ISO7740, ISO7741, ISO7742 SLLSEP4I – MARCH 2016 – REVISED FEBRUARY 2024 ISO774x High-Speed, Robust-EMC Reinforced and Basic Quad-Channel Digital Isola

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isc N-Channel MOSFET Transistor IRFR7740, IIRFR7740 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤7.2mΩ ·Enhancement mode: ·100% avalanche t

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isc N-Channel MOSFET Transistor 2SK3774-01SJ FEATURES ·Drain Current : ID= 32A@ TC=25℃ ·Drain Source Voltage : VDSS= 300V(Min) ·Static Drain-Source

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ICs for Audio Common Use AN5277 Dual Channel SEPP Power Amplifier s Overview The AN5277 is a monolithic integrated circuit designed for 10.0 W (26 V,

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2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV) 2SK2777 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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40 V, 47 A, 6.9 mΩ Low RDS(ON) N ch Trench Power MOSFET DKI04077 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ------

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-251(IPAK) packaging ·High speed switching ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot v

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