78CN10N Datasheet | Specifications & PDF Download

IPB79CN10N G IPD78CN10N G IPI80CN10N G IPP80CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on)

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IPD78CN10N G IPD78CN10N G Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.

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isc N-Channel MOSFET Transistor IPD78CN10N,IIPD78CN10N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤78mΩ ·Enhancement mode: ·100% avalanche

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IPD78CN10N G IPD78CN10N G Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.

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