7N50 Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 7N50-MTQ Preliminary 7.0A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 7N50-MTQ is an N-channel mode power MO

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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UNISONIC TECHNOLOGIES CO., LTD 17N50K-MT Preliminary 17A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 17N50K-MT is a N-channel mode power MO

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FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET March 2013 FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5  Features • RDS(on)

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DTP7N50SJ/DTP7N50FSJ/DTU7N50SJ/DTL7N50SJ ZZZGLQ WHNMS /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max

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iscN-Channel MOSFET Transistor IRFP17N50L ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.32Ω (MAX) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS

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DTP7N50SJ/DTP7N50FSJ/DTU7N50SJ/DTL7N50SJ ZZZGLQ WHNMS /$IBOOFM
507
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max

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DTP7N50SJ/DTP7N50FSJ/DTU7N50SJ/DTL7N50SJ ZZZGLQ WHNMS /$IBOOFM
507
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max

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ITP17N50A N-Channel MOSFET Applications: • Adaptor • Charger • SMPS Standby Power Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge •

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IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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R3117x SERIES LOW VOLTAGE DETECTOR with SENSE pin NO.EA-186-080617 OUTLINE The R3117x series are CMOS-based voltage detector ICs with high detector

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance,

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Sa mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor SDP07N50 SDF07N50 Ver 2.1 PRODUCT SUMMARY VDSS ID RDS(ON) (Ω) Typ

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TMA7N50HF, TMD7N50HF, TMU7N50HF, TMP7N50HF Wuxi Unigroup Microelectronics Company 500V N-Channel MOSFET FEATURES  Fast switching  Integrate fast r

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IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS =

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iscN-Channel MOSFET Transistor IRFIB7N50A ·FEATURES ·Low drain-source on-resistance: RDS(ON) =0.52Ω (MAX) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS

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IRF440-443/IRF840-843 MTM7N45/7N50 N-Channel Power MOSFETs 8A, 450V/500V Description These devices are n-channel, enhancement mode, power MOSFETs des

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GENERAL DESCRIPTION GPT07N50 POWER FIELD EFFECT TRANSISTOR FEATURES This advanced high voltage MOSFET is designed to withstand Higher Current Ratin

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 7N50 ·DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Volta

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 500V D RDSON (MAX.) 1.3Ω ID 7A G UIS, 100% Tested S

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