7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FE.
SW7N65B - N-channel TO-220F MOSFET
SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-22.JCS7N65B - N-CHANNEL MOSFET
R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson (@Vgs=10V) Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z Hi.MDF7N65B - N-Channel MOSFET
MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma.APT97N65B2C6 - Super Junction MOSFET
COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated .PTA07N65B - 650V N-ch Planar MOSFET
650V N-ch Planar MOSFET General Features RoHS Compliant RDS(ON),typ.=1.2 Ω@VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body .7N65B - N-CHANNEL MOSFET
7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE 7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A Low gate charge Low Ciss Fast switching 100% aval.APT47N65BC3 - MOSFET
APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increa.APT47N65BC3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=47A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : .APT47N65BC3G - MOSFET
APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increa.JCS7N65BE - N-CHANNEL MOSFET
N R N-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID VDSS Rdson-max (@Vgs=10V) Qg-typ 7.0 A 650 V 1.1 Ω 23 nC LED APPLI.