7N65B Datasheet | Specifications & PDF Download

MDF7N65B N-channel MOSFET 650V MDF7N65B N-Channel MOSFET 650V, 7.0A, 1.35Ω General Description These N-channel MOSFET are produced using advanced Ma

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R N N-CHANNEL MOSFET JCS7N65B MAIN CHARACTERISTICS Package ID VDSS Rdson （@Vgs=10V） Qg z z z UPS 7.0 A 650 V 1.3 Ω 25 nC APPLICATIONS z Hi

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650V N-ch Planar MOSFET General Features  RoHS Compliant  RDS(ON),typ.=1.2 Ω@VGS=10V  Low Gate Charge Minimize Switching Loss  Fast Recovery Body

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APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increa

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7N65(F,B,H) 7A mps,650 Volts N-CHANNEL MOSFET FEATURE  7A,650V,RDS(ON)=1.4Ω@VGS=10V/3.5A  Low gate charge  Low Ciss  Fast switching  100% aval

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SAMWIN Features ■ High ruggedness ■ RDS(ON) (Max 1.4 Ω)@VGS=10V ■ Gate Charge (Typical 19nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested TO-22

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COOLMOS Power Semiconductors • Ultra Low RDS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=47A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance :

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N R N-CHANNEL MOSFET JCS7N65E MAIN CHARACTERISTICS Package ID VDSS Rdson-max （@Vgs=10V） Qg-typ 7.0 A 650 V 1.1 Ω 23 nC    LED APPLI

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APT47N65BC3 APT47N65SC3 650V 47A 0.070Ω COOL MOS Po we r Se miconduc tors Super Junction MOSFET • Ultra low RDS(ON) • Increa

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