830B Datasheet | Specifications & PDF Download

Multi-channel Digital Audio Processor PS9830B 8Ch, 24bits, 192kHz Digital Audio Processor For Full Digital Amplifier Pulsus Technologies Copyright ©

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N01S830HA, N01S830BA 1 Mb Ultra-Low Power Serial SRAM Standard SPI Interface and Multiplex DUAL and QUAD Interface Overview The ON Semiconductor seri

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Techcode® 3A Low Dropout Regulator with Enable DATASHEET TD5830A/B General Description Features The TD5830 is a high performance positive voltage

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1.5GHz ÷ 10 Prescaler Advance Information DS3690 Issue 3.3 June 1999 SP8830 Features q q Ordering Information SP8830 A DG SP8830 B DG DES9157201/AC

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IRFW830B / IRFI830B November 2001 IRFW830B / IRFI830B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect

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Applications Note: SY5830B Single Stage Flyback And PFC Controller With Primary Side Control For LED Lighting General Description The SY5830B is a si

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JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCRs Rev.3.0 DESCRIPTION: JCT630/830 series of silicon controlled rectifiers, with high ab

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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ice Not param e som L not a fi re sub a PRE is is limits ; Th ic etr ion. e. A RpY icat chang f i N c I e o t s I M nal ject MITSUBISHI SOUND PROCE

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NSL Naina Semiconductor Ltd. 50W Zener Diodes Features · Herme cally sealed (welded) · Available in Normal and Reverse polarity · Standard polarity i

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HD61830/HD61830B LCDC (LCD Timing Controller) ADE-207-275(Z) '99.9 Rev. 0.0 Description The HD61830/HD61830B is a dot matrix liquid crystal graphic d

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1N2804B – 1N2846RB and 1N4557B – 1N4564RB Available on commercial versions 50 Watt Zener Diodes Qualified per MIL-PRF-19500/114 DESCRIPTION This se

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Optically-Coupled Isolator Optoelectronic Products 5-11 FCD830/A/B/C/D General Description The FCD830 series of optoisolators have a npn silicon Pla

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FEATURES ► Measures up to 16 battery cells in series ► Maximum lifetime TME: ±1.8 mV at 3.3 V per cell (–40°C to +125°C) ► Simultaneous and continuous

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JIEJIE MICROELECTRONICS CO. , Ltd JCT630/830 Series 30A SCRs Rev.3.0 DESCRIPTION: JCT630/830 series of silicon controlled rectifiers, with high ab

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www.vishay.com IRF830B Vishay Siliconix D Series Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) max. () at 25 °C Qg max. (nC) Qgs (nC) Q

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IRF830B/IRFS830B November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transi

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1N2804B THRU 1N2846B SILICON ZENER DIODES 50W, 6.8 THRU 200 VOLT 5% TOLERANCE TO-3 50 MIL CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The

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